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IEEE ELECTRON DEVICE LETTERS, VOL. EDL-7, NO. 4, APRIL 1986 259
vin Test tructure for Measuring U e Specific Contact Resistivity
Abstract-A vertical Kelvin test structure, which can be used to
measure the true specific contact resistivity of a metallization system, is
proposed and studied. For this test structure, the driving current flows
“vertically,” thus the sheet resistance and current crowding effects are
eliminated and measurement on the true specific contact resistivity
becomes possible. Experimental works show that this test structure gives a
more linear relation between resistance and contact area than the
conventional six-terminal test structure.
I. INTRODUCTION
PECIFIC contact resistivity pc is one of the most important
parameters on studying interfacial properties of
metallization systems. Many test structures [1]-[4] have been
proposed to measure its value. However, due to some inherent
parasitic factors such as the sheet resistance of the diffused
layer and the lateral current crowdings (both horizontal and
vertical), the “true” value of pc is very difficult, if not
impossible, to be measured [5]-[7]. The main reason for this
difficulty comes from the fact that, for all these proposed test
structures, the current flows “horizontally” in a diffused bar
while the “vertical” interfacial contact resistance is to be
determined.
In this letter, a “vertical” Kelvin test structure to measure
the “true” specific contact resistivity is presented. For this
test structure, the driving current flows “vertically” from the
metal contact pad toward the contacted substrate. This
eliminates the current crowding effects which are inherent in
the horizontal type of test structures, and makes the determination
of the “true” specific contact resistivity possible. This
test structure can be incorporated with the six-terminal test
structure [4] to compare the measured results.
11. TEST STRUCTURE
The cross section ofthe test structure is shown in Fig. l(a)
along with its top view in Fig. l(b). The driving current I is
forced from pad 1 toward the substrate and the voltage V is
sensed between pads 2 and 3 along the implanted bar. The
vertical current flow is restricted by an isolation p-n junction.
For this structure, it can be seen that the current flows
vertically and only through the contact window: hence the
current distribution in the contact region is uniform provided
that the contact region is metallurgically uniform. The contact
Manuscript received September 18, 1985; revised December 2, 1985.
IEEE ELECTRON DEVICE LETTERS, VOL. EDL-7, NO. 4, APRIL 1986 259
vin Test tructure for Measuring U e Specific Contact Resistivity
Abstract-A vertical Kelvin test structure, which can be used to
measure the true specific contact resistivity of a metallization system, is
proposed and studied. For this test structure, the driving current flows
“vertically,” thus the sheet resistance and current crowding effects are
eliminated and measurement on the true specific contact resistivity
becomes possible. Experimental works show that this test structure gives a
more linear relation between resistance and contact area than the
conventional six-terminal test structure.
I. INTRODUCTION
PECIFIC contact resistivity pc is one of the most important
parameters on studying interfacial properties of
metallization systems. Many test structures [1]-[4] have been
proposed to measure its value. However, due to some inherent
parasitic factors such as the sheet resistance of the diffused
layer and the lateral current crowdings (both horizontal and
vertical), the “true” value of pc is very difficult, if not
impossible, to be measured [5]-[7]. The main reason for this
difficulty comes from the fact that, for all these proposed test
structures, the current flows “horizontally” in a diffused bar
while the “vertical” interfacial contact resistance is to be
determined.
In this letter, a “vertical” Kelvin test structure to measure
the “true” specific contact resistivity is presented. For this
test structure, the driving current flows “vertically” from the
metal contact pad toward the contacted substrate. This
eliminates the current crowding effects which are inherent in
the horizontal type of test structures, and makes the determination
of the “true” specific contact resistivity possible. This
test structure can be incorporated with the six-terminal test
structure [4] to compare the measured results.
11. TEST STRUCTURE
The cross section ofthe test structure is shown in Fig. l(a)
along with its top view in Fig. l(b). The driving current I is
forced from pad 1 toward the substrate and the voltage V is
sensed between pads 2 and 3 along the implanted bar. The
vertical current flow is restricted by an isolation p-n junction.
For this structure, it can be seen that the current flows
vertically and only through the contact window: hence the
current distribution in the contact region is uniform provided
that the contact region is metallurgically uniform. The contact
Manuscript received September 18, 1985; revised December 2, 1985.
IEEE电子器件快报,音量.EDL的- 7,没有.四,1986年4月259
VIN的测试tructure略带测量电阻率的具体联系
抽象的垂直开尔文测试结构,可用于
衡量一个真正的金属化体系的具体接触电阻率,是
提出和研究.对于此测试结构,驱动电流流
“垂直”,从而片电阻和电流拥挤效应
消除,真正的具体接触电阻率测量
成为可能.实验表明,该工程的测试结构给出了一个
更多的线性关系电阻与接触面积比
传统的六终端测试结构.
一,引言
PECIFIC接触电阻率的个人电脑是最重要的一
参数学习的界面性能
金属化体系.许多测试结构[1] - [4]已
提出来衡量其价值.但是,由于一些固有
如薄膜电阻的寄生因素的扩散
层和横向（横向和目前crowdings
垂直）,“真正”的PC值是非常困难的,如果不
不可能的,要测量[5] - [7].这主要的原因
困难来自于一个事实,即对所有这些建议的测试
结构中,电流流“横向”在酒吧弥漫
而“垂直”接触电阻要
决定.
在信中,一个“垂直”开尔文测试结构来衡量
“真实”,提出了具体的接触电阻.对于这
测试结构,驱动电流流“纵向”从
对金属基体接触垫接触.这
消除了电流,在拥挤的影响固有
结构水平的测试类型,并使得决心
在“真”的具体接触电阻可能.这
测试结构可以集成在6终端测试
结构[4]比较测量结果.
11.测试结构
断面ofthe测试结构如图所示.1（1）
随着它的俯视图.1（b）项.是的驱动电流I
从垫一对基板和被迫的电压V
2和3之间垫感觉到沿植入栏.该
垂直电流限制是由一个孤立的pn结.
对于这种结构,可以看出,目前流动
只有通过纵向联络窗口：因此
在接触区域的电流分布均匀提供
该接触区是冶金制服.的接触
投稿日期1985年9月18日,经修订的1985年12月2日
VIN的测试tructure略带测量电阻率的具体联系
抽象的垂直开尔文测试结构,可用于
衡量一个真正的金属化体系的具体接触电阻率,是
提出和研究.对于此测试结构,驱动电流流
“垂直”,从而片电阻和电流拥挤效应
消除,真正的具体接触电阻率测量
成为可能.实验表明,该工程的测试结构给出了一个
更多的线性关系电阻与接触面积比
传统的六终端测试结构.
一,引言
PECIFIC接触电阻率的个人电脑是最重要的一
参数学习的界面性能
金属化体系.许多测试结构[1] - [4]已
提出来衡量其价值.但是,由于一些固有
如薄膜电阻的寄生因素的扩散
层和横向（横向和目前crowdings
垂直）,“真正”的PC值是非常困难的,如果不
不可能的,要测量[5] - [7].这主要的原因
困难来自于一个事实,即对所有这些建议的测试
结构中,电流流“横向”在酒吧弥漫
而“垂直”接触电阻要
决定.
在信中,一个“垂直”开尔文测试结构来衡量
“真实”,提出了具体的接触电阻.对于这
测试结构,驱动电流流“纵向”从
对金属基体接触垫接触.这
消除了电流,在拥挤的影响固有
结构水平的测试类型,并使得决心
在“真”的具体接触电阻可能.这
测试结构可以集成在6终端测试
结构[4]比较测量结果.
11.测试结构
断面ofthe测试结构如图所示.1（1）
随着它的俯视图.1（b）项.是的驱动电流I
从垫一对基板和被迫的电压V
2和3之间垫感觉到沿植入栏.该
垂直电流限制是由一个孤立的pn结.
对于这种结构,可以看出,目前流动
只有通过纵向联络窗口：因此
在接触区域的电流分布均匀提供
该接触区是冶金制服.的接触
投稿日期1985年9月18日,经修订的1985年12月2日