灵鹊做题网详细具体介绍下MOS工艺
来源：学生作业帮 编辑：灵鹊做题网作业帮 分类：综合作业 时间：2024/04/28 00:15:33
详细具体介绍下MOS工艺
详细的没有,简单的看下边：
Metal–oxide–semiconductor structure
A traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor, with one of the electrodes replaced by a semiconductor.
Metal–oxide–semiconductor structure
A traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor, with one of the electrodes replaced by a semiconductor.
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